NUS6189MNTWG【PDF 5/14 页】IC OVP LOW PRO W/MOSFET 22-QFN

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NUS6189MN

ELECTRICAL CHARACTERISTICS (T J = 25 ° C, CNTRL ≤ 1.5 V, V CC = 6.0 V, unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

OVP THRESHOLD

Input Threshold (V IN Increasing)

Input Hysteresis (V IN Decreasing)

Input Impedance (V IN = V th )

V th

V hyst

R IN

6.65

50

70

6.85

150

150

7.08

200

–

V

mV

k W

CONTROL INPUT

Control Voltage High (Output On)

Control Voltage Low (Output Off)

Control Current High (V ih = 5.0 V)

Control Current Low (V il = 0.5 V)

V cntrlHI

V cntrlLO

I ih

I il

1.50

–

–

–

–

–

95

10

–

0.50

200

?

V

V

m A

m A

OVP GATE DRIVE VOLTAGE

Gate2 Voltage High (V IN = 8.0 V; I Source = 10 mA)

Gate2 Voltage High (V IN = 8.0 V; I Source = 0.25 mA)

Gate2 Voltage High (V IN = 8.0 V; I Source = 0 mA)

Gate2 Voltage Low

V oh

V ol

V IN – 1.0

V IN – 0.25

V IN – 0.1

–

–

–

–

–

–

–

–

0.10

V

V

(V IN = 6.0 V; I Sink = 0 mA, Control = 0 V)

Gate2 Sink Current (V IN < V Th , OVP OUT = 1.0 V, Note 5)

I Sink

10

33

50

m A

TIMING

Turn on Delay ? Input

t on_IN

–

–

10

m s

(V IN stepped down from 8 to 6 V; measured at 50% point of OVP OUT , Note 5)

Turn off Delay ? Input (V IN stepped up from 6.0 to 8.0 V; C L = 12 nF Output >

V IN ? 1.0 V)

Turn on Delay ? Control (Control signal stepped down from 2.0 to 0.5 V;

measured to 50% point of OVP OUT , Note 5)

Turn off Delay ? Control (Control signal stepped up from 0.5 to 2.0 V; C L = 12

nF Output > V IN ? 1.0 V)

t off_IN

t on_CT

t off_CT

–

–

–

0.5

–

1.0

1.0

10

2.0

m s

m s

m s

TOTAL DEVICE

V IN Operating Voltage Range (Note 5)

Input Bias Current

Undervoltage Lockout (V IN Decreasing)

V IN

I Bias

V Lock

3.0

–

2.5

4.8

0.75

2.8

25

1.0

3.0

V

mA

V

OVP FET (MOSFET2) (T J = 25 ° C, V CC = 6.0 V, unless otherwise specified)

Voltage Drop (V IN to OVP OUT , V GS = -4.5 V)

I Load = 0.6 A

I Load = 1.0 A

I Load = 1.0 A, T J = 150 ° C (Note 5)

V OVP

–

–

–

33

66

90

54

100

135

mV

On Resistance

R DS(on)

m W

I Load = 0.6 A

I Load = 1.0 A

I Load = 1.0 A, T J = 150 ° C (Note 5)

–

?

?

50

52

90

90

100

135

Off State Leakage Current

T J = 125 ° C

I Leak

–

–

-0.1

–

-1.0

-100

m A

CHARGING BJT (T J = 25 ° C, unless otherwise specified)

Collector-Emitter Cutoff Current (V CES = -20 V, Note 5)

DC Current Gain (I B = -2.0 mA, V CE = -2.0 V, Note 6)

I CES

h fe

–

180

–

–

-0.1

–

m A

–

Collector-Emitter Saturation Voltage

I C = -1.0 A, I B = -0.01 A

I C = -1.0 A, I B = -0.1 A

V CE(sat)

–

–

-0.10

-0.069

-0.12

-0.09

V

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